In-line inspection and clean for immersion lithography

ABSTRACT

An immersion lithography apparatus includes a lens system, an immersion hood, a wafer stage, an inspection system and a cleaning fluid supplier. The lens system is configured to project a pattern onto a wafer. The immersion hood is configured to confine an immersion fluid between the lens system and the wafer, and includes a peripheral hole configured to suck up the immersion fluid. The wafer stage is configured to position the wafer under the lens system. The inspection system is configured to detect whether there is contamination in the peripheral hole. The cleaning fluid supplier is coupled to the inspection system and configured to supply a cleaning fluid through the peripheral hole to remove the contamination, in which the inspection system and the cleaning fluid supplier are coupled to the wafer stage.

BACKGROUND

As semiconductor fabrication technologies are continually progressing tosmaller feature sizes, immersion lithography apparatus and methods arebeing adopted. Immersion lithography is a technique that can enhance theresolution of projection lithography by permitting exposures with anumerical aperture (NA) greater than one, which is the theoreticalmaximum for conventional “dry” systems. By filling the space between afinal optical element and a semiconductor wafer, the immersionlithography permits exposure with light that would otherwise be totallyinternally reflected at an optic-air interface.

When an exposure process is performed using the immersion lithographyapparatus, contamination such as particles and water residues may beremained on and thus to contaminate the semiconductor wafer to beprocessed therein. Such contamination may cause defects and yielddegradations of the semiconductor wafers. Accordingly, improvements inimmersion lithography apparatus and methods for effective inspection andcleaning of contamination continue to be sought.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a cross-sectional view of a general immersion lithographyapparatus.

FIG. 2 is a cross-sectional view of an immersion lithography apparatusin accordance with some embodiments.

FIG. 3 is a top view of an immersion hood in accordance with someembodiments.

FIG. 4 is a flow chart illustrating a method for immersion lithographyin accordance with some embodiments.

FIG. 5 is a cross-sectional view of an immersion lithography apparatusin accordance with some embodiments.

FIG. 6 is a cross-sectional view of an immersion lithography apparatusin accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, a firstfeature is disposed over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare in direct contact, and may also include embodiments in whichadditional features may be disposed between the first and secondfeatures, such that the first and second features may not be in directcontact. In addition, the present disclosure may repeat referencenumerals and/or letters in the various examples. This repetition is forthe purpose of simplicity and clarity and does not in itself dictate arelationship between the various embodiments and/or configurationsdiscussed.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the disclosure.As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

Further, spatially relative terms, such as “under,” “upper,” “lower” andthe like, may be used herein for ease of description to describe oneelement or feature's relationship to another element(s) or feature(s) asillustrated in the figures. The spatially relative terms are intended toencompass different orientations of the device in use or operation inaddition to the orientation depicted in the figures. The apparatus maybe otherwise oriented (rotated 90 degrees or at other orientations) andthe spatially relative descriptors used herein may likewise beinterpreted accordingly.

In use of a general immersion lithography apparatus, particles and waterresidues may usually remain on a semiconductor wafer. Such contaminationmay cause defects and yield degradations of the semiconductor wafers.

FIG. 1 is a cross-sectional view of a general immersion lithographyapparatus 10. The immersion lithography apparatus 10 includes a lenssystem 110, an immersion hood 120 and a wafer stage 130. The lens system110 is configured to project a pattern onto a wafer 140, which is heldby the wafer stage 130. The wafer stage 130 may be moved to let the lenssystem 110 sequentially project a same pattern onto a plurality ofregions of the wafer 140 during an exposure process. The immersion hood120 is configured to confine an immersion fluid 150 between an end ofthe lens system 110 and the wafer 140. Because of the presence of theimmersion fluid 150, the immersion lithography apparatus 10 can exhibitexcellent optical performance so as to fabricate semiconductor deviceswith smaller feature sizes.

After the exposure process is performed, the wafer stage 130 may bemoved, and the immersion fluid 150 may be in contact with another regionof the wafer 140. However, some immersion fluid 150 may be remained onan original region of the wafer 140, which has been processed by thelens system 110. In order to prevent occurrence of the phenomenon, theimmersion hood 120 further includes a plurality of peripheral holes 128configured to suck up the immersion fluid 150. However, as shown in FIG.1, if one of the peripheral holes 128 is blocked by contamination C suchas a particle, the immersion fluid 150 cannot be sucked up through theperipheral hole 128, resulting in residual immersion fluid 150 on thewafer 140. Defects may be therefore generated on the wafer 140, whichmay cause the wafer 140 to be scrapped. A critical dimension scanningelectron microscope (CD-SEM) may be utilized to monitor contaminationbut costly. Also, it is not effectively to manually conduct theinspection and cleaning processes of contamination.

To address the issue, the present disclosure provides a novel immersionlithography apparatus including an inspection system and a cleaningfluid supplier to perform in-line detection and cleaning of theperipheral holes 128 before or during the exposure process. Variousembodiments of the novel immersion lithography apparatus will bedescribed in detail below.

FIG. 2 is a cross-sectional view of a novel immersion lithographyapparatus 20 for in-line detection and cleaning during an exposureprocess in accordance with some embodiments. As shown in FIG. 2, theimmersion lithography apparatus 20 includes a lens system 210, animmersion hood 220, a wafer stage 230, an inspection system 260 and acleaning fluid supplier 270.

The lens system 210 (or called as imaging lens system) is configured toproject a pattern onto a wafer 240. The lens system 210 may have asingle lens or multiple lenses and/or other lens elements and may beintegrated with an illumination system (not shown). For example, thelens system 210 may include an objective lens, which may have a singlelens element or a plurality of lens elements. The materials used foreach lens element may be chosen based on the wavelength of light used inthe immersion lithography process to minimize absorption and scattering.

The immersion hood 220 may be positioned proximate an end of the lenssystem 210. The immersion hood 220 is configured to confine an immersionfluid 250 between the lens system 210 and the wafer 240. The immersionfluid 250 may include de-ionized water (DIW), water solution or otherproper fluid having an index of refraction higher than that of water.The immersion hood 220 may include an aperture 222 as an immersion fluidinlet to provide and transfer fresh immersion fluid 250 into a spacebetween the lens system 210 and the wafer 240. The immersion hood 220may also include an aperture 224 as an immersion fluid outlet to removeand transfer the immersion fluid 250 from the space. In variousembodiments, the immersion fluid 250 is circulated through the apertures222, 224 during the exposure process. It is understood that theimmersion fluid 250 may be provided to and removed from the space with asufficient rate. The immersion hood 220 may also be designed to provideanother fluid such as dry air through apertures 226 for constraining theimmersion fluid 250.

The wafer stage 230 is configured to hold and position the wafer 240under the lens system 210. The wafer stage 230 may include variouscomponents suitable for performing precise movement and positioning withnanoscale accuracy. The wafer 240 to be processed by the immersionlithography apparatus 20 may be a semiconductor wafer such as a siliconwafer. Alternatively, the semiconductor wafer may include an elementarysemiconductor, a compound semiconductor, an alloy semiconductor orcombinations thereof. The semiconductor wafer may include one or morematerial layers such as poly-silicon, metal, and/or dielectric, to bepatterned. The wafer may further include an imaging layer (not shown)formed thereon. The imaging layer may be a photoresist layer (or calledas resist layer, photo sensitive layer, patterning layer) that isresponsive to the exposure process for creating patterns. The imaginglayer may be a positive or negative type resist material and may be asingle-layer or multi-layer structure.

After the exposure process is performed on the region of the wafer 240,the wafer stage 230 may be moved to let the lens system 210 project thepattern onto another region of the wafer 240. In order not to remain anyimmersion fluid 250 on the processed region of the wafer 240, theimmersion hood 220 further includes a plurality of peripheral holes 228disposed adjacent to an edge of the immersion hood 220 and configured tosuck up the immersion fluid 250. FIG. 3 is a top view of an immersionhood 220 in accordance with some embodiments. The peripheral holes 228are adjacent to and arranged along the edge of the immersion hood 220 tosuck up all of the residual immersion fluid 250 as far as possible. Invarious embodiments, the peripheral hole 228 has a diameter in a rangeof from 40 microns to 80 microns. However, the size and the arrangementof the peripheral holes 228 may be appropriately adjusted based onactual needs, and not limited to those shown in FIG. 3. In addition, invarious embodiments, as shown in FIG. 2, the peripheral hole 228 isvertically through the immersion hood 220; specifically, an axis (orcalled as long axis) of the peripheral hole 228 is vertical to an upperor lower surface of the immersion hood 220.

Referring back to FIG. 2, to solve the problem that the peripheral holes228 may be blocked by contamination C, which may result in residualimmersion fluid 250 on the wafer 240, the inspection system 260 and thecleaning fluid supplier 270 coupled thereto are provided to performin-line detection and cleaning of the peripheral holes 228. Theinspection system 260 and the cleaning fluid supplier 270 are coupled tothe wafer stage 230. For instance, the inspection system 260 may detectwhether is contamination C in the peripheral hole 228, and the locationof the peripheral hole 228 having the contamination C may be rememberedby a controller (not shown) of the wafer stage 230 coupled to theinspection system 260. The controller may be a CPU. Afterwards, thecleaning fluid supplier 270 may provide a cleaning fluid 280 through theperipheral hole 228, which is controlled by the controller coupled tothe cleaning fluid supplier 270, so as to remove the contamination C.After the cleaning process is performed using the cleaning fluidsupplier 270, the inspection system 260 may check whether thecontamination C has been removed.

The inspection system 260 is configured to detect whether there is thecontamination C in the peripheral holes 228. As shown in FIG. 2, theinspection system 260 includes a camera 262 and an image comparisonmodule 264 coupled thereto. The camera 262 is configured to captureimages of the peripheral holes 228. The camera 262 may be a chargedcoupled device (CCD) camera used to convert light into electricalcurrent. In various embodiments, as shown in FIG. 2, the camera 262 isintegrated with the wafer stage 230, such that all of the peripheralholes 228 shown in FIG. 3 may be scanned using the camera 262 by movingthe wafer stage 230. In addition, in various embodiments, the camera 262is watertight so as not to be deteriorated by the immersion fluid 250during the exposure process. In various embodiments, a protective layer(not shown) such as a cover glass is formed on the camera 262.

The image comparison module 264 is coupled between the camera 262 andthe cleaning fluid supplier 270, and configured to compare the imagecaptured by the camera 262 with a comparison image to confirm whetherthere is the contamination C in the peripheral hole 228. The comparisonimage is acted as an absolute reference to the subsequently obtainedimages. When the image of the peripheral hole 228 is the same as thecomparison image, there is no contamination in the peripheral hole 228;in contrast, when the image of the peripheral hole 228 is different fromthe comparison image, there is something such as the contamination C inthe peripheral hole 228, and thus a cleaning process should beperformed.

The controller of the wafer stage 230 described above may be coupledbetween the image comparison module 264 and the cleaning fluid supplier270. The inspection results generated from the image comparison module264 may be transferred to the controller to let the cleaning fluidsupplier 270 clean the peripheral holes 228 having contamination C. Thecleaning fluid supplier 270 is configured to supply a cleaning fluid 280through the peripheral hole 228 to remove the contamination C. Invarious embodiments, the cleaning fluid 280 is a material selected fromwater, clean air, nitrogen, inert gas or a combination thereof, but notlimited thereto. In various embodiments, the cleaning fluid supplier 270has an outlet 272 parallel to the axis of the peripheral hole 228 so asto provide sufficient pressure to flush out the contamination C.

In various embodiments, in order to exhibit precise movement andpositioning for in-line detection and cleaning of the peripheral holes228, the camera 262 and the cleaning fluid supplier 270 are integratedwith the wafer stage 230, as shown in FIG. 2. In various embodiments,the camera 262 and the cleaning fluid supplier 270 are embedded withinthe wafer stage 230. In various embodiments, the cleaning fluid supplier270 is adjacent to the camera 262, and thus the contamination C may beimmediately removed after inspection. In various embodiments, the camera262 and the cleaning fluid supplier 270 are disposed outside a regionoccupied by the wafer 240. The in-line detection and cleaning may beaccordingly performed during the exposure process. Moreover, in variousembodiments, when the exposure process is carried out, the cleaningfluid supplier 270 is further configured to suck up the residualimmersion fluid 250. That is, not only the peripheral holes 228 but alsothe cleaning fluid supplier 270 are utilized to remove the residualimmersion fluid 250.

Another aspect of the present disclosure provides a method for immersionlithography. FIG. 4 is a flow chart illustrating a method for immersionlithography in accordance with some embodiments. FIG. 5 is across-sectional view of an immersion lithography apparatus in accordancewith some embodiments. FIG. 6 is a cross-sectional view of an immersionlithography apparatus in accordance with other embodiments. Theoperations of the method of FIG. 4 are explained with FIGS. 2, 5-6.

In operation 401, a wafer 240 is positioned under a lens system 210using a wafer stage 230, as shown in FIG. 2. Specifically, the wafer 240is loaded on the wafer stage 230, and the wafer stage 230 is then movedto position the wafer 240 under the lens system 210.

In operation 402, a pattern is projected onto the wafer 240 using thelens system 210 while confining an immersion fluid 250 to a region ofthe wafer 240 using an immersion hood 220, as shown in FIG. 2. Theimmersion hood 220 includes a peripheral hole 228 configured to suck upthe immersion fluid 250. In various embodiments, the peripheral hole 228is a plurality of peripheral holes 228 configured to suck up all of theresidual immersion fluid as far as possible.

In operation 501, whether there is contamination C in the peripheralhole 228 is detected using an inspection system 260, which is coupled tothe wafer stage 230, as shown in FIG. 2. The inspection system 260 isconfigured for automatic in-line detection of the contamination C in theperipheral holes 228. A controller (not shown) of the wafer stage 230,which is coupled to the inspection system 260, may remember the locationof the peripheral hole 228 having the contamination C.

Referring to FIG. 2, in various embodiments, the inspection system 260includes a camera 262 and an image comparison module 264 coupledthereto, and operation 501 includes capturing an image of the peripheralhole 228 using the camera 262; and comparing the image with a comparisonimage to confirm whether there is the contamination C in the peripheralhole 228 using the image comparison module 264. In other words, thecomparison image of the peripheral hole 228 without any contaminationmay be firstly provided to the image comparison module 264. Next, thecamera 262 may capture the image of the peripheral hole 228 and thentransfer to the image comparison module 264 to compare the image withthe comparison image so as to confirm whether there is the contaminationC in the peripheral hole 228.

In operation 502, the contamination C in the peripheral hole 228 isremoved using a cleaning fluid supplier 270, which is coupled to thewafer stage 230, as shown in FIG. 2. In various embodiments, operation502 is conducted by supplying a cleaning fluid 280 through theperipheral hole 228 by the cleaning fluid supplier 270. The cleaningfluid supplier 270 may be coupled to the controller of the wafer stage230 described above. The inspection results generated from theinspection system 260 may be transferred to the controller to let thecleaning fluid supplier 270 clean the peripheral holes 228 having thecontamination C. After operation 502, the inspection system 260 maycheck whether the contamination C has been removed.

In various embodiments, during the exposure process (i.e., operation402), the in-line detection (i.e., operation 501) is performed, as shownin FIG. 2. That is, when the exposure process is performed, the camera262 automatically captures an image of the peripheral hole 228. Theimage will be compared with the comparison image to confirm whether isthe contamination C in the peripheral hole 228 using the imagecomparison module 264. If there is no contamination in the peripheralhole 228, the exposure process and the in-line detection will becontinuously performed. On the contrary, if the contamination C isdetected by the image comparison module 264, the exposure process willbe stopped immediately, which is controlled by the controller of thewafer stage 230, and the cleaning process will then be performed.

In various embodiments, in-line detection and cleaning of the peripheralholes 228 (i.e., operations 501 and 502) are performed beforepositioning the wafer 240 under the lens system 210 (i.e., operation401), as shown in FIG. 5. If there is no contamination in the peripheralhole 228 confirmed by the inspection system 260, the in-line detectionwill be continuously performed. If the contamination C is detected bythe inspection system 260, the cleaning process will be performed. Whenall of the peripheral holes 228 are clean determined by the inspectionsystem 260, the wafer 240 may then be positioned under the lens system210.

In various embodiments, the method further includes sucking up theimmersion fluid 250 using the cleaning fluid suppler 270 during theexposure process, as shown in FIG. 6. In other words, not only theperipheral holes 228 but also the cleaning fluid supplier 270 areutilized to remove the residual immersion fluid 250 during the exposureprocess.

In view of the above, since the immersion lithography apparatus includesthe inspection system and the cleaning fluid supplier, in-line detectionand cleaning of the peripheral holes of the immersion hood can beimplemented to avoid residual immersion fluid remained on the wafer.Accordingly, defects and yield degradations of the semiconductor wafers,which result from the residual immersion fluid, may be significantlyreduced or completely avoided.

According to some embodiments, an immersion lithography apparatus isprovided, which includes a lens system, an immersion hood, a waferstage, an inspection system and a cleaning fluid supplier. The lenssystem is configured to project a pattern onto a wafer. The immersionhood is configured to confine an immersion fluid between the lens systemand the wafer and includes a peripheral hole configured to suck up theimmersion fluid. The wafer stage is configured to position the waferunder the lens system. The inspection system is configured to detectwhether there is contamination in the peripheral hole. The cleaningfluid supplier is coupled to the inspection system and configured tosupply a cleaning fluid through the peripheral hole to remove thecontamination, in which the inspection system and the cleaning fluidsupplier are coupled to the wafer stage.

According to some embodiments, an immersion lithography apparatus isprovided, which includes a lens system, an immersion hood and a waferstage. The lens system is configured to project a pattern onto a wafer.The immersion hood is configured to confine an immersion fluid betweenthe lens system and the wafer and includes a peripheral hole configuredto suck up the immersion fluid. The wafer stage is configured toposition the wafer under the lens system, in which the wafer stageincludes an inspection system and a cleaning fluid supplier, which arecoupled to the wafer stage. The inspection system is configured todetect whether there is contamination in the peripheral hole. Thecleaning fluid supplier is coupled to the inspection system andconfigured to supply a cleaning fluid through the peripheral hole toremove the contamination.

According to some embodiments, a method for immersion lithography isprovided. The method includes following operations. A wafer ispositioned under a lens system using a wafer stage. A pattern isprojected onto the wafer using the lens system while confining animmersion fluid to a region of the wafer using an immersion hood, inwhich the immersion hood includes a peripheral hole configured to suckup the immersion fluid. Whether there is contamination in the peripheralhole is detected using an inspection system coupled to the wafer stage.The contamination in the peripheral hole, if detected, is removed usinga cleaning fluid supplier coupled to the wafer stage.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An immersion lithography apparatus, comprising: alens system configured to project a pattern onto a wafer; an immersionhood configured to confine an immersion fluid between the lens systemand the wafer, and the immersion hood comprising a peripheral holeconfigured to suck up the immersion fluid; a wafer stage configured toposition the wafer under the lens system; an inspection systemconfigured to detect whether there is contamination in the peripheralhole; and a cleaning fluid supplier coupled to the inspection system andconfigured to supply a cleaning fluid through the peripheral hole toremove the contamination, wherein the inspection system and the cleaningfluid supplier are coupled to the wafer stage.
 2. The immersionlithography apparatus of claim 1, wherein the inspection systemcomprises: a camera configured to capture an image of the peripheralhole; and an image comparison module coupled between the camera and thecleaning fluid supplier, and configured to compare the image with acomparison image to confirm whether there is the contamination in theperipheral hole.
 3. The immersion lithography apparatus of claim 2,wherein the camera and the cleaning fluid supplier are integrated withthe wafer stage.
 4. The immersion lithography apparatus of claim 3,wherein the cleaning fluid supplier is adjacent to the camera.
 5. Theimmersion lithography apparatus of claim 2, wherein the camera and thecleaning fluid supplier are outside a region occupied by the wafer. 6.The immersion lithography apparatus of claim 2, wherein the camera andthe cleaning fluid supplier are embedded within the wafer stage.
 7. Theimmersion lithography apparatus of claim 2, wherein the camera iswatertight.
 8. The immersion lithography apparatus of claim 1, whereinthe cleaning fluid supplier is further configured to suck up theimmersion fluid.
 9. The immersion lithography apparatus of claim 1,wherein the cleaning fluid is a material selected from water, clean air,nitrogen, inert gas or a combination thereof.
 10. The immersionlithography apparatus of claim 1, wherein the cleaning fluid supplierhas an outlet parallel to an axis of the peripheral hole.
 11. Theimmersion lithography apparatus of claim 1, wherein the peripheral holeis a plurality of peripheral holes, which are adjacent to and arrangedalong an edge of the immersion hood.
 12. An immersion lithographyapparatus, comprising: a lens system configured to project a patternonto a wafer; an immersion hood configured to confine an immersion fluidbetween the lens system and the wafer, and the immersion hood comprisinga peripheral hole configured to suck up the immersion fluid; and a waferstage configured to position the wafer under the lens system, whereinthe wafer stage comprises an inspection system and a cleaning fluidsupplier, which are coupled to the wafer stage, the inspection systemconfigured to detect whether there is contamination in the peripheralhole, the cleaning fluid supplier coupled to the inspection system andconfigured to supply a cleaning fluid through the peripheral hole toremove the contamination.
 13. The immersion lithography apparatus ofclaim 12, wherein the inspection system comprises: a camera configuredto capture an image of the peripheral hole; and an image comparisonmodule coupled to the camera and the cleaning fluid supplier, andconfigured to compare the image with a comparison image to confirmwhether there is the contamination in the peripheral hole.
 14. A methodfor immersion lithography, the method comprising: positioning a waferunder a lens system using a wafer stage; projecting a pattern onto thewafer using the lens system while confining an immersion fluid to aregion of the wafer using an immersion hood, wherein the immersion hoodcomprises a peripheral hole configured to suck up the immersion fluid;detecting whether there is contamination in the peripheral hole using aninspection system coupled to the wafer stage; and removing thecontamination in the peripheral hole, if detected, using a cleaningfluid supplier coupled to the wafer stage.
 15. The method of claim 14,wherein detecting whether there is the contamination in the peripheralhole using the inspection system coupled to the wafer stage and removingthe contamination in the peripheral hole using the cleaning fluidsupplier coupled to the wafer stage are before positioning the waferunder the lens system using the wafer stage.
 16. The method of claim 14,wherein detecting whether there is the contamination in the peripheralhole using the inspection system coupled to the wafer stage is duringprojecting the pattern onto the wafer using the lens system.
 17. Themethod of claim 14, wherein the peripheral hole is a plurality ofperipheral holes, and the inspection system is configured for automaticin-line detection of contamination in the peripheral holes.
 18. Themethod of claim 14, wherein the inspection system comprises a camera andan image comparison module coupled to the camera, and detecting whetherthere is the contamination in the peripheral hole by the inspectionsystem comprises: capturing an image of the peripheral hole using thecamera; and comparing the image with a comparison image to confirmwhether there is the contamination in the peripheral hole using theimage comparison module.
 19. The method of claim 14, wherein removingthe contamination in the peripheral hole using the cleaning fluidsupplier coupled to the wafer stage is conducted by supplying a cleaningfluid through the peripheral hole by the cleaning fluid supplier. 20.The method of claim 14, further comprising sucking up the immersionfluid using the cleaning fluid suppler during projecting the patternonto the wafer using the lens system.